Storing Matter’technique in SIMS depth profile analysis

Secondary ion mass spectrometry (SIMS) is a very useful technique for the analysis of layered systems. It is based on the primary ion beam sputtering of solids and mass analysis of the emitted secondary ions. A main limitation of this technique results from the direct quantitative analysis, since the ionization efficiency of a given atom is highly influenced by the neighbouring atoms at the surface. This phenomenon is known as the ‘matrix effect’. This problem can be partially solved by separation of the sputtering and ionization processes. The ‘Storing Matter’ technique involves deposition of the sputtered matter onto a rotating collector. Subsequently, ionisation occurs during the ion beam bombardment of the stored matter. In case of sputtering of a given layered structure, the stored matter deposit presents the sequence of the deposition process and the analysis of this deposit reflects the investigated structure. We analyse a set of on oxidized steel samples and oxidized steel covered by aluminium. These types of structures are known for strong matrix effects at the metal oxide interfaces. The results of the ‘Storing Mater’ analyses are compared with the results of the classical SIMS analysis.

Keywords

SIMSSTORING MATTER TECHNIQUEQUANTIFICATIONDEPTH PROFILE ANALYSIS

Publication year

Publication language

angielski

Journal title / conference title

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Page numbers [from-to]

153 - 156

Author (4)





Organization unit


Katedra Fizyki Atomowej, Molekularnej i Optycznej

Faculty


Wydział Fizyki Technicznej i Matematyki Stosowanej